PART |
Description |
Maker |
HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM 256 MBit Synchronous DRAM 256兆位同步DRAM 256M (16Mx16) PC133 3-3-3 256Mb (32Mx8) FBGA PC133 3-3-3 256Mb (16Mx16) FBGA PC133 3-3-3 256Mb (64Mx4) PC133 3-3-3 256Mb (64Mx4) FBGA PC133 3-3-3 256 MBit Synchronous DRAM
|
Infineon Technologies AG Infineon Technologies A...
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KVR133X64C3/512 |
512Mb 64M x 64-Bit PC133 CL3 168-Pin DIMM Module
|
Kingston Technology
|
KVR133X64C3Q256 KVR133X64C3Q_256 KVR133X64C3Q/256 |
256MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 256MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology ETC[ETC] List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
|
HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life 64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
HYS72V32600GR-7.5 HYS72V32501GR-7.5 HYS72V128520GR |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC 256MB (32Mx72) PC133 (3-3-3) 1-bank 1GB (128Mx72) PC133 (3-3-3) 1-bank GB的(128Mx72)的PC1333-3-3银行 ?512MB (64Mx72) PC133 (3-3-3) 1-bank?
|
Infineon Technologies AG
|
HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM 64M X 4 DDR DRAM, PBGA60 16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
IBM13N64734HCA |
64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块)
|
International Business Machines, Corp.
|
TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|